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Book/Report | FZJ-2018-03716 |
1992
Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag
Jülich
Please use a persistent id in citations: http://hdl.handle.net/2128/19104
Report No.: Juel-2572
Abstract: A cantilever bending experiment has bees set up to study adsorbate-induced surface stress on silicon and nickel single crystal samples. The adsorbate-induced bending of the substrate is detected using a very sensitive capacitance method. The resolution of the stress measurements was $\pm$ 20 dyn/cm and $\pm$ 100 dyn/cm, on 0.3 mm thick Si- and Ni-samples, respectively. Oxygen-induced surface stress on Si(111) and Si(100) has been investigated for substrate temperatures ranging from 300 K to 700 K. As a result of the breaking of the Si-Si bonds and the formation of Si-O-Si bonds, both surfaces exhibit a measurable stress. A linear stress vs. coverage dependence is found. The oxygen-induced surface stress on silicon is independent of the adsorption temperature. A monolayer coverage on Si(111) causes a considerable compressive stress of -7000 $\pm$ 980 dyn/cm, wheras the same oxygen coverage on Si(100) induces a small tensile stress of 260 $\pm$ 40 dyn/xm. The experimental results are in decent agreement with a simple cluster calculation using a valence-bond model. Thus, the different stress behavior can be attributed to differences in the local geometric structures of the O-SWi(111) and the O-Si/100) clusters. [...]
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